1 elm13415ca-s general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 65 80 c /w 1 maximum junction-to-ambient steady-state 85 100 c /w 1, 4 maximum junction-to-lead steady-state rjl 43 52 c /w parameter symbol limit unit note drain-source voltage vds -20 v gate-source voltage vgs 8 v continuous drain current ta=25c id -4.0 a ta=70c -3.5 pulsed drain current idm -30 a 3 power dissipation ta=25c pd 1.5 w 2 ta=70c 1.0 junction and storage temperature range tj, tstg -55 to 150 c elm13415ca-s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. internal esd protection is included. ? vds=-20v ? id=-4a (vgs=-4.5v) ? rds(on) < 43m (vgs=-4.5v) ? rds(on) < 54m (vgs=-2.5v) ? rds(on) < 73m (vgs=-1.8v) ? esd protected s d g 5 - pin configuration circuit single p-channel mosfet sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2 3
2 elm13415ca-s electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -20 v zero gate voltage drain current idss vds=-20v vgs= 0v -1 a tj=55c -5 gate-body leakage current igss vds=0v, vgs=8v 10 a gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.30 -0.57 -0.90 v on state drain current id(on) vgs=-4.5v, vds=-5v -30 a static drain-source on-resistance rds(on) vgs=-4.5v id= -4a 37 43 m tj = 125c 52 62 vgs =- 2.5v, id =-4 a 45 54 vgs =- 1.8v, id =-2 a 54 73 vgs =- 1.5v, id =-1 a 65 forward transconductance gfs vds =- 5v, id =-4 a 20 s diode forward voltage vsd is =- 1a, vgs=0v -0.64 -1.00 v max. body -diode continuous current is -2 a dynamic parameters input capacitance ciss vgs=0v, vds=-10v, f=1mhz 620 780 940 pf output capacitance coss 80 115 150 pf reverse transfer capacitance crss 50 80 110 pf switching parameters total gate charge qg vgs=-4.5v, vds=-10v id=-4a 7.4 9.3 11.0 nc gate-source charge qgs 1.2 1.5 1.8 nc gate-drain charge qgd 1.0 1.8 2.5 nc turn - on delay time td(on) vgs=-4.5v, vds=-10v rl=2.5, rgen=3 120 ns turn - on rise time tr 240 ns turn - off delay time td(off) 2.8 ns turn - off fall time tf 2.0 ns body diode reverse recovery time trr if =-4 a, dl/dt = 500a/s 11 14 17 ns body diode reverse recovery charge qrr if =-4 a, dl/dt = 500a/s 24 30 36 nc ta=25 c single p-channel mosfet 5 - note : 1. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta =25c. the value in any given application depends on the user's speci?c board design. 2. the power dissipation pd is based on tj(max)=150c, using 10s junction-to-ambient thermal resistance. 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial tj=25c. 4. the rja is the sum of the thermal impedence from junction to lead rjl and lead to ambient. 5. the static characteristics in figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 6. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 fr-4 board with 2oz.copper, assuming a maximum junction temperature of tj(max)=150c. the soa curve provides a single pulse rating.
3 typical electrical and thermal characteristics elm13415ca-s ao3415 typical electrical and thermal characteristics 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m ? ? ? ? ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 ? c 125 ? c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v -8v -2.5v -3.0v v gs =-2.5v v gs =-1.5v i d =-4a, v gs =-4.5v i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v 40 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m ? ? ? ? ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 ? 125 ? 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m ? ? ? ? ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 ? c 125 ? c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-4a 25 ? 125 ? 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v -8v -2.5v -3.0v v gs =-2.5v v gs =-1.5v i d =-4a, v gs =-4.5v i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v rev 6: july 2010 www.aosmd.com page 3 of 5 single p-channel mosfet 5 -
4 ao3415 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 100ms t j(max) =150 ? c t a =25 ? c 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =100 ? c/w 100ms t j(max) =150 ? c t a =25 ? c rev 6: july 2010 www.aosmd.com page 4 of 5 elm13415ca-s single p-channel mosfet 5 -
5 elm13415ca-s single p-channel mosfet 5 - ao3415 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g r esistive sw itching test c ircuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig v gs - + v d c d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt r m rr v dd v dd q = - idt t rr -isd -vds f -i -i v dc d u t v dd vgs v ds v gs r l r g r esistive sw itching test c ircuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) rev 6: july 2010 www.aosmd.com page 5 of 5 test circuit & waveform
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